The system is designed to measure static and dynamic parameters of high-power MOSFET and IGBT transistors; measuring system self-test; measuring system self-calibration.

The system is based on the NI PXI platform and a third-party signal power amplifier. The software is developed in the NI LabVIEW graphical programming environment. The software has an easy-to-use and intuitive user interface.

Measurements :

IGBT transistors:

1. Collector-emitter breakdown voltage
2. Collector-emitter cutoff current
3. Gate-emitter leakage current
4. Collector-emitter saturation voltage
5. Gate-emitter threshold voltage
6. Input, output, and transfer capacitances
7. Gate charge, gate-emitter charge, gate-collector charge
8. Delay, rise, fall, discharge times

MOSFET transistors :

1. Gate leakage current
2. Residual drain current
3. Initial drain current
4. Drain-source breakdown voltage
5. Threshold voltage
6. ON resistance
7. Differential transconductance
8. Gate charge, gate-source charge, gate-drain charge

Details :

• Author : yeatAdmin
• Category : Electronic Components Test Systems
• Date : April 19, 2015